• Part: H03N60
  • Description: N-Channel Power Field Effect Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 92.33 KB
Download H03N60 Datasheet PDF
H03N60 page 2
Page 2
H03N60 page 3
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H03N60 Key Features

  • Robust High Voltage Termination
  • Avalanc he Energy Specified
  • Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature